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Filming method of carbon nanotube and the field emission source using the film

Imported: 24 Feb '17 | Published: 09 Sep '03

Toshiyuki Tsuboi

USPTO - Utility Patents

Abstract

A method for filming a carbon nanotube film comprising the steps of preparing a solution having a solvent into which a coarse carbon nanotube is dispersed, evaporating the solvent, disposing a substrate in the solution, the substrate having an exposed portion patterned into a predetermined shape, and depositing a carbon nanotube on the exposed portion of the substrate.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects and features of the present invention will become apparent from the following description of the preferred embodiments given in conjunction with the accompanying drawings, wherein:

FIGS. 1A and 1B describe characteristic graphs of a diode structure using a crude, coarse carbon nanotube;

FIG. 2 shows a perspective view setting forth a method for forming a carbon nanotube film into a predetermined pattern in accordance with a first preferred embodiment of the present invention;

FIG. 3 illustrates a perspective view setting forth a method for forming a carbon nanotube film into a predetermined pattern in accordance with a second preferred embodiment of the present invention;

FIG. 4 offers a schematic representation of a diode structure in accordance with the present invention;

FIG. 5 depicts a characteristic graph of a field emission electron source manufactured by using a supernatant and a precipitate in accordance with the present;

FIGS. 6A and 6B present characteristic graphs of a field emission electron source made of a carbon nanotube in accordance with the present invention;

FIGS. 7A and 7B provide graphs of a current versus time of the field emission electron source made of a carbon nanotube in accordance with the present; and

FIG. 8 exhibits a schematic representation of a triode structure in accordance with the present invention.

Claims

1. A method for forming a carbon nanotube film, the method comprising the steps of:

2. The method of claim 1, wherein the depositing step is carried out using a supernatant obtained by removing a precipitate after dispersing the coarse carbon nanotube into the solvent.

3. The method of claim 1, wherein the deposing step is carried out using the solution obtained after dispersing the coarse carbon nanotube into the solvent or, a remaining solution obtained after filtering a supernatant, the supernatant being obtained by removing a precipitate after dispersing the coarse carbon nanotube into the solvent.

4. The method of claim 1, wherein the depositing step is carried out using a solution obtained after pulverizing a course carbon nanotube and dispersing the pulverized coarse carbon nanotube into a solvent.

5. The method of claim 1, wherein the substrate is a conductive plate.

6. A carbon nanotube film formed by using the method of claim 1.

7. A field emission electron source made of a carbon nanotube film by using the method of claim 1.

8. A method for forming a carbon nanotube film, the method comprising the steps of:

9. The method of claim 8, wherein the scattering step and the evaporating step are repeatedly carried out.

10. The method of claim 8, wherein the solution is a supernatant obtained after dispersing the coarse carbon nanotube into the solvent and removing a precipitate therefrom.

11. The method of claim 8, wherein the solution is a solution obtained after dispersing the coarse carbon nanotube into the solvent or a remaining solution obtained after filtering a supernatant, the supernatant being obtained after dispersing the coarse carbon nanotube into the solvent and removing a precipitate therefrom.

12. The method of claim 8, wherein the solution is a solution obtained after pulverizing a coarse carbon nanotube and dispersing the pulverized coarse carbon nanotube into a solvent.

13. A carbon nanotube film formed by using the method of claim 5.

14. A field emission electron source made of a carbon nanotube film by using the method of claim 5.