Indexed on: 19 Apr '13Published on: 19 Apr '13Published in: The journal of the Korean Physical Society
0.935(Bi0.5Na0.5)TiO3-0.065BaTiO3 (BNT-BT) thin films have been grown on Pt(111)/Ti/SiO2/Si substrates by using a pulsed laser deposition method. Deposition conditions of oxygen pressure and deposition temperature were changed. The BNT-BT thin film deposited at 750 °C and 300 mTorr exhibited a slim hysteresis loop with a remnant polarization (2Pr) of 11 µC/cm2 and a low leakage current density of 7.3 × 10−5 A/cm2 at 98 kV/cm. The piezoelectric responses of the thin films were investigated using piezoelectric force microscopy with a lock-in amplifier. The thin films exhibited piezoelectric properties with a d33,f value of 168 pm/V.