Indexed on: 01 Sep '01Published on: 01 Sep '01Published in: Applied Physics A
A highly (100)-oriented metallic LaNiO3 film was prepared directly on a Si substrate by a simple metalorganic decomposition (MOD) technique using lanthanum nitrate and nickel acetate as the starting sources. Subsequent Pb(Zr,Ti)O3 (PZT) thin films deposited on the LaNiO3-coated Si substrate were obtained by a modified sol–gel method. It was found that the PZT thin films began to form a single perovskite phase at a low annealing temperature of 530 °C, and exhibited highly (100) orientation. A ferroelectric capacitor of Pt/Pb(Zr,Ti)O3/LaNiO3/Si annealed at 600 °C displayed a good P-E hysteresis characteristic and was fatigue-free even after 1011 switching cycles.