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Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode

Research paper by X.J. Meng, J.L. Sun, J. Yu, G.S. Wang, S.L. Guo, J.H. Chu

Indexed on: 01 Sep '01Published on: 01 Sep '01Published in: Applied Physics A



Abstract

A highly (100)-oriented metallic LaNiO3 film was prepared directly on a Si substrate by a simple metalorganic decomposition (MOD) technique using lanthanum nitrate and nickel acetate as the starting sources. Subsequent Pb(Zr,Ti)O3 (PZT) thin films deposited on the LaNiO3-coated Si substrate were obtained by a modified sol–gel method. It was found that the PZT thin films began to form a single perovskite phase at a low annealing temperature of 530 °C, and exhibited highly (100) orientation. A ferroelectric capacitor of Pt/Pb(Zr,Ti)O3/LaNiO3/Si annealed at 600 °C displayed a good P-E hysteresis characteristic and was fatigue-free even after 1011 switching cycles.