Indexed on: 29 Jul '07Published on: 29 Jul '07Published in: Journal of Sol-Gel Science and Technology
Ferroelectric Ba(Sn0.05Ti0.95)O3 (BTS) thin films were deposited onto Pt/Ti/SiO2/Si substrates by sol–gel technique with a 100 nm thick LSCO buffer layer. The influence of buffer layer on the phase and microstructure of the thin films was examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current (DC) electric field. The results show that the LSCO buffer layer had a marked effect on the dielectric properties of the BTS films. The BTS thin films with LSCO buffer layer had enhanced dielectric properties.