Quantcast

Endurance Write Speed Tradeoffs in Nonvolatile Memories

Research paper by Dmitri Strukov

Indexed on: 22 Nov '15Published on: 22 Nov '15Published in: Physics - Other



Abstract

We derive phenomenological model for endurance-write time switching tradeoff for nonvolatile memories with thermally activated switching mechanisms. The model predicts linear to cubic dependence of endurance on write time for metal oxide memristors and flash memories, which is partially supported by experimental data for the breakdown of metal-oxide thin films.