Indexed on: 13 Jan '16Published on: 13 Jan '16Published in: Indian Journal of Physics
Ga doped ZnO nanorods with homogeneous morphology grown by ultrasonic-assisted hydrothermal method on ITO substrate. The effect of hydrothermal growth times 30, 60, 90 and 120 min on the characteristics of ZnO nanorods was examined. The samples were analyzed by X-ray diffraction, scanning electron microscopy, UV–Vis spectrometer and conductivity measurement. With the optimization of the growth times (60 min), we employed Ga doped ZnO nanorods with diverse dopant concentration in fabrication of polymer solar cell. By comparing the effect of Ga doped ZnO thin films with various dopant ratio (0, 0.5, 1.0 and 2 %) on the performance of Ga doped ZnO thin films, 0.5 % Ga doped ZnO was found as the most effective doping level among the selected doping concentrations. Also using 0.5 % Ga doped ZnO thin film, Jsc of 7.54 mA/cm2, Voc of 0.541 V, and fill factor of 64.81 % were achieved, which led to power conversion efficiency of 2.64 %.