Electric properties of single-crystalline nickel films deposited by the method of chemical transport reactions

Research paper by N. I. Kiselev, S. V. Kan, V. G. Pyn'ko, E. V. Babkin

Indexed on: 01 Apr '86Published on: 01 Apr '86Published in: Russian Physics Journal

Abstract

The conditions for obtaining single-crystalline nickel films with a high resistivity ratio at room temperature and at 4.2 K (up to 1000) are described. The thicknesses of the films studied fall in the range 0.7–10 μm. The meanfree path length of the carriers (6–7 μm) and the specularity parameter (0.05) are determined using the Fuks-Sondheimer method.

Electric properties of single-crystalline nickel films deposited by the method of chemical transport reactions

Abstract

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Electric properties of single-crystalline nickel films deposited by the method of chemical transport reactions

Abstract

More like this:

Field electron emission of carbon-based nanocone films

Surface microstructure and morphology study of thin films produced from volatile fluorine-containing rare-earth β-diketonate complexes and their adducts

Preparation and luminescence properties of patterned SOG/Sr2MgSi2O7:Eu2+, Dy3+ long-persistent luminescence composite thin films by one-step photolithography

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