Electric properties of single-crystalline nickel films deposited by the method of chemical transport reactions
Indexed on: 01 Apr '86Published on: 01 Apr '86Published in: Russian Physics Journal
Abstract
The conditions for obtaining single-crystalline nickel films with a high resistivity ratio at room temperature and at 4.2 K (up to 1000) are described. The thicknesses of the films studied fall in the range 0.7–10 μm. The meanfree path length of the carriers (6–7 μm) and the specularity parameter (0.05) are determined using the Fuks-Sondheimer method.
