Indexed on: 01 Nov '05Published on: 01 Nov '05Published in: Applied Physics A
Ba(Zr0.2Ti0.8)O3 (BZT) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by a pulsed laser deposition process. The BZT thin films directly grown on annealed and un-annealed Pt/Ti/SiO2/Si substrates exhibited random and high (100) orientations, respectively. The dielectric constant of a 400-nm-thick BZT film with (100) orientation was 331, which was higher than that of a BZT film with random orientation (∼236). This result is attributed to the fact that the polar axis of the (100)-oriented films was more tilted away from the normal to the film surface than that of the randomly oriented films. Also, the tunabilities of BZT thin films with random and (100) orientations were ∼50% and ∼59% at an applied field of 400 kV/cm, respectively. Improved tunability has been attributed to the (100) texture of the film leading to an enhancement of the in-plane-oriented polar axis.