Indexed on: 30 Jun '18Published on: 25 Jun '18Published in: Synthetic Metals
Publication date: September 2018 Source:Synthetic Metals, Volume 243 Author(s): Chi-Ting Tsai, Ya-Han Liu, Jian-Fu Tang, Po-Ching Kao, Chung-Hao Chiang, Sheng-Yuan Chu A contemporary hole injection bilayer structure (HIBL) based on molybdenum trioxide (MoO3)-doped N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) has been demonstrated and compared with several efficient transition metal oxide (TMO)-based hole injection layers (HILs). Device performances of OLEDs was significantly improved by the utilization of this HIBL. Results of electroluminescence (EL) spectra, hole-only current density-voltage test and capacitance measurement by impedance spectroscopy (IS) are indicative of enhanced hole injection and transport characteristics. Moreover, ultraviolet photoelectron spectroscopy (UPS) results authenticated a cascading highest occupied molecular orbital (HOMO) energy level contributed to both improved hole injection and transport properties, therefore leads to better carrier balance and device efficiency in OLEDs.