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Effects of hydrostatic pressure on the electron [Formula: see text] factor and g-factor anisotropy in GaAs-(Ga, Al)As quantum wells under magnetic fields.

Research paper by N N Porras-Montenegro, C A CA Duque, E E Reyes-Gómez, L E LE Oliveira

Indexed on: 19 Nov '08Published on: 19 Nov '08Published in: Journal of physics. Condensed matter : an Institute of Physics journal



Abstract

The hydrostatic-pressure effects on the electron-effective Landé [Formula: see text] factor and g-factor anisotropy in semiconductor GaAs-Ga(1-x)Al(x)As quantum wells under magnetic fields are studied. The [Formula: see text] factor is computed by considering the non-parabolicity and anisotropy of the conduction band through the Ogg-McCombe effective Hamiltonian, and numerical results are displayed as functions of the applied hydrostatic pressure, magnetic fields, and quantum-well widths. Good agreement between theoretical results and experimental measurements in GaAs-(Ga, Al)As quantum wells for the electron g factor and g-factor anisotropy at low values of the applied magnetic field and in the absence of hydrostatic pressure is obtained. Present results open up new possibilities for manipulating the electron-effective g factor in semiconductor heterostructures.