Effect of stripe orientation on dislocation propagation in epitaxial lateral overgrowth diamond on Ir

Research paper by Kimiyoshi Ichikawa, Hideyuki Kodama, Kazuhiro Suzuki, Atsuhito Sawabe

Indexed on: 02 Apr '17Published on: 03 Jan '17Published in: Diamond and Related Materials


Dislocation propagation during epitaxial lateral overgrowth (ELO) of diamond on Ir using stripe nucleation with two different orientations was investigated by cross-sectional Transmission Electron Microscopy and Etch Pit Method. In case of 〈100〉 stripes with diamond {100} growth sector, [001] dislocation and large inclined dislocation were observed. For 〈110〉 stripes with {111} growth sector, dislocation bending was observed with [110] propagation preferred. These results demonstrate that stripe direction in ELO affects dislocation propagation during diamond growth. The control of growth sector can be used to influence the dislocation distribution in heteroepitaxial diamond.

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