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Effect of annealing in Zn vapor and liquid Zn on photoluminescence of high-purity polycrystalline ZnTe

Research paper by V. S. Bagaev, V. V. Zaitsev, Yu. V. Klevkov, V. S. Krivobok, E. E. Onishchenko

Indexed on: 01 Mar '03Published on: 01 Mar '03Published in: Semiconductors



Abstract

The photoluminescence from high-purity polycrystalline ZnTe has been studied. The evolution of the emission spectra upon annealing in Zn is analyzed. The effect of impurity aggregation is observed in the initial samples. This effect gives rise to an undulatory spectrum on the long-wavelength wing of the line associated with emission from an acceptor-bound exciton. It is demonstrated that annealing leads to homogenization of the impurity distribution, which results in the appearance of a rich structure of two-hole transitions. An analysis of these lines yields the energies of the ground and excited states of Li and Cu acceptor impurities.