Dependence of GaN photoluminescence on the excitation intensity

Research paper by V. N. Bessolov, V. V. Evstropov, M. E. Kompan, M. V. Mesh

Indexed on: 01 Oct '02Published on: 01 Oct '02Published in: Semiconductors


The dependence of the edge photoluminescence (PL) intensity on the excitation intensity in (0001) HVPE-grown GaN samples has been studied. The specific behavior found is that, at a low excitation level, the dependence is markedly superlinear, namely, superquadratic, and at high excitation levels it is nearly linear. A model accounting for the observed superquadratic behavior is proposed which is based on the identity of the recombination processes in the surface space charge region (SCR) under optical excitation with those in the SCR of the Schottky barrier or a p-n junction under current flow conditions. The superquadratic dependence is obtained analytically under the assumption that the nonradiative recombination channel is associated with multiple-hopping tunneling along a dislocation, which is formed by a chain of carrier localization centers and crosses the SCR. The experimental dependence of the PL intensity on the excitation intensity is a power-law function. The distance between the neighboring localization centers, i.e., the period of the potential along the dislocation, is determined as ∼4.1 nm.