Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

Research paper by S. Kaschieva, L. Rebohle, W. Skorupa

Indexed on: 01 Mar '03Published on: 01 Mar '03Published in: Applied Physics A


The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O+ or B+) implanted samples are gamma-irradiated with 60Co. Gamma irradiation creates electron levels at the SiSiO2 interface of the samples in a different way depending on the type of the previously implanted atoms (O+ or B+). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration of the deeper levels (in the silicon band gap) of boron-implanted samples.