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Composition modulation by twinning in InAsSb nanowires.

Research paper by Michael M Schnedler, Tao T Xu, Verana V Portz, Jean-Philippe JP Nys, Sébastien S Plissard, Maxime M Berthe, Holger H Eisele, Rafal E RE Dunin-Borkowski, Philipp P Ebert, Bruno B Grandidier

Indexed on: 20 Dec '18Published on: 20 Dec '18Published in: Nanotechnology



Abstract

We observe a composition modulated axial heterostructure in zincblende (ZB) InAs0.90Sb0.10 nanowires (NWs) initiated by pseudo periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit 4 planes with reduced Sb concentration due to a lower Sb incorporation during lateral overgrowth of a 4H wurtzite as compared to a ZB stacking sequence. We anticipate that this leads to compositional band offsets in addition to known structural band offsets present between 4H and ZB polytypes, changing the band alignment from type II to type I. © 2018 IOP Publishing Ltd.