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Charge sensitivity simulation on a double barrier GaAs/InGaAs/InAs quantum dot-in-well hybrid structure photodetector

Research paper by W. W. Wang, M. J. Wang, X. B. Jin, F. M. Guo, Y. Q. Li

Indexed on: 07 Jan '15Published on: 07 Jan '15Published in: Optical and Quantum Electronics



Abstract

In this paper we simulated a photodetector based on a double barrier GaAs/InGaAs/InAs quantum dots–quantum well hybrid structure, calculated its I–V and C–V characteristic and studied the electronic states of the self-assembled InAs quantum dots embedded in InGaAs and GaAs quantum wells. By optimizing the device structure, ultrahigh sensitivity was obtained. We attributed this high sensitivity to the double barrier structure that effectively lowered dark current. This simulation method can be used to designing and optimizing devices with similar structure.