Indexed on: 08 Jun '13Published on: 08 Jun '13Published in: Electrocatalysis
A series of boron-doped diamond films were grown using hot filament technique, over wide doping level ranges. Their semiconductor characteristics (the uncompensated acceptor concentration and flat band potential) were determined from Mott–Schottky plots measured by electrochemical impedance spectroscopy. These parameters can be used for the films’ characterization. The applicability of the electrochemical impedance spectroscopy approach in the semiconductor diamond characterization is discussed.