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Characterization of an organic field-effect thin-film transistor in operation using fluorescence-yield x-ray absorption spectroscopy.

Research paper by Hiroyuki S HS Kato, Hiroyuki H Yamane, Nobuhiro N Kosugi, Maki M Kawai

Indexed on: 24 Nov '11Published on: 24 Nov '11Published in: Physical review letters



Abstract

In situ element-specific observation of electronic states of organic films beneath metal electrodes is achieved by x-ray absorption spectroscopy (XAS) in the bulk-sensitive fluorescence-yield (FY) mode. The molecular orientation in Au-covered oligo-thiophene films is confirmed by the C K-edge FY-XAS spectra and the applied bias dependence of the spectra is successfully detected for the first time. The present method can give deeper insights into the electronic-state investigation of various real-device systems under operational conditions.

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