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Carbon nanotube transistors with graphene oxide films as gate dielectrics

Research paper by WangYang Fu, Lei Liu, WenLong Wang, MuHong Wu, Zhi Xu, XueDong Bai, EnGe Wang

Indexed on: 08 May '10Published on: 08 May '10Published in: Science China Physics, Mechanics & Astronomy



Abstract

Carbon nanomaterials, including the one-dimensional (1-D) carbon nanotube (CNT) and two-dimensional (2-D) graphene, are heralded as ideal candidates for next generation nanoelectronics. An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide. Here, in analogy to the widespread use of silicon dioxide (SiO2) in silicon microelectronic industry, we report the proof-of-principle use of graphite oxide (GO) as a gate dielectrics for CNT field-effect transistor (FET) via a fast and simple solution-based processing in the ambient condition. The exceptional transistor characteristics, including low operation voltage (2 V), high carrier mobility (950 cm2/V−1 s−1), and the negligible gate hysteresis, suggest a potential route to the future all-carbon nanoelectronics.