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Calculation of trap parameters from thermally stimulated photoconduction data

Research paper by V. P. Zayachkivskii, P. P. Beisyuk, E. S. Nikonyuk, A. V. Savitskii

Indexed on: 01 Jul '76Published on: 01 Jul '76Published in: Russian Physics Journal



Abstract

The example of n-type CdTe∶Ge crystals is used to consider the scope for determining trap-ping-center parameters for photosensitive semiconductor crystals on the basis of the conditions for peaks in thermally stimulated photoconduction curves for two different states of initial trap filling. Equations are derived for the parameters of the trapping levels and the recombination levels.