Calculation of trap parameters from thermally stimulated photoconduction data
Indexed on: 01 Jul '76Published on: 01 Jul '76Published in: Russian Physics Journal
Abstract
The example of n-type CdTe∶Ge crystals is used to consider the scope for determining trap-ping-center parameters for photosensitive semiconductor crystals on the basis of the conditions for peaks in thermally stimulated photoconduction curves for two different states of initial trap filling. Equations are derived for the parameters of the trapping levels and the recombination levels.
