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Ballistic quantum transport through Ge/Si core/shell nanowires

Research paper by D. Kotekar-Patil, B. -M. Nguyen, J. Yoo, S. A. Dayeh, S. M. Frolov

Indexed on: 08 Nov '16Published on: 08 Nov '16Published in: arXiv - Physics - Mesoscopic Systems and Quantum Hall Effect



Abstract

We study ballistic hole transport through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-P$\acute{e}$rot interference patterns as well as conductance plateaus at integer multiples of 2e$^2$/h at zero magnetic field. Magnetic field evolution of these plateaus reveals large effective Land$\acute{e}$ g-factors. Ballistic effects are observed in nanowires with silicon shell thicknesses of 1 - 3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic subband-resolved transport.