Atomic Layer Deposited Aluminum Oxide for Interface Passivation of Cu2ZnSn(S,Se)4 Thin‐Film Solar Cells

Research paper by Yun Seog Lee, Talia Gershon, Teodor K. Todorov, Wei Wang, Mark T. Winkler, Marinus Hopstaken, Oki Gunawan, Jeehwan Kim

Indexed on: 27 Apr '16Published on: 26 Apr '16Published in: Advanced Energy Materials

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Abstract

Nanometer‐scale‐thick Al2O3 thin films grown by atomic layer deposition are implemented as an effective interface‐passivation strategy for improving Cu2ZnSn(S,Se)4‐based thin‐film solar cell device performance. Photoluminescence characterization indicates that the enhancement originates from improved interface quality of the solar cell devices.

Atomic Layer Deposited Aluminum Oxide for Interface Passivation of Cu2ZnSn(S,Se)4 Thin‐Film Solar Cells

Abstract

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Atomic Layer Deposited Aluminum Oxide for Interface Passivation of Cu2ZnSn(S,Se)4 Thin‐Film Solar Cells

Abstract

More like this:

Predicting the interface morphologies of silicon films on arbitrary substrates: application in solar cells.

Fabrication of Ag Nanoparticles Embedded in Al:ZnO as Potential Light-Trapping Plasmonic Interface for Thin Film Solar Cells

Improvement in Sb2Se3 Solar Cell Efficiency through Band Alignment Engineering at the Buffer/Absorber Interface.

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