Indexed on: 25 Mar '14Published on: 25 Mar '14Published in: Physics - Materials Science
A fresh look on carbon-based transistor channel materials like single-walled carbon nanotubes (CNT) and graphene nanoribbons (GNR) in future electronic applications is given. Although theoretical predictions initially promised that GNR (which do have a bandgap) would perform equally well as transistors based on CNTs, experimental evidence for the well-behaved transistor action is missing up to now. Possible reasons for the shortcomings as well as possible solutions to overcome the performance gap will be addressed. In contrast to GNR, short channel CNT field effect transistors (FET) demonstrate in the experimental realization almost ideal transistor characteristics down to very low bias voltages. Therefore, CNT-FETs are clear frontrunners in the search of a future CMOS switch, that will enable further voltage and gate length scaling. Essential features which distinguish CNT-FETs from alternative solution will be discussed and benchmarked. Finally, the gap to industrial wafer-level scale SWCNT integration will be addressed and strategies for achieving highly aligned carbon nanotube fabrics will be discussed. Without such a high yield wafer-scale integration, SWCNT circuits will be an illusionary dream.