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A method for determining the state of the silicon-sapphire boundary in thin silicon-on-sapphire layers

Research paper by S. V. Tikhov, D. A. Pavlov, N. O. Krivulin

Indexed on: 14 Nov '13Published on: 14 Nov '13Published in: Russian Microelectronics



Abstract

A simple method for determining the state of the silicon-sapphire boundary in thin silicon-on-sapphire layers, which is based on measuring a saturation photo-emf and volt-ampere characteristics in Au/Si diode structures is proposed. It is shown that in silicon-on-sapphire layers that are obtained by the low-temperature molecular beam epitaxy a p-type conduction layer is formed at the silicon-sapphire boundary.