A CMOS silicon spin qubit.

Research paper by R R Maurand, X X Jehl, D D Kotekar-Patil, A A Corna, H H Bohuslavskyi, R R Laviéville, L L Hutin, S S Barraud, M M Vinet, M M Sanquer, S S De Franceschi

Indexed on: 25 Nov '16Published on: 25 Nov '16Published in: Nature communications


Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.